GaAs-PD属于近红外光电二极管,可用于光通讯、安防、光屏障等。我们提供的产品有芯片、内置前放、阵列等等,可提供滤色片以及光纤接口选项。
图片 | 型号 | 探测器材料 | 光敏尺寸 | 响应波长-范围 | 响应度-峰值 | 上升沿时间 | 暗电流 | 封装 | 封装类型 | 引脚数 | 窗口 |
---|---|---|---|---|---|---|---|---|---|---|---|
FCI-H125G-GaAs-100 | GaAs | Ø100 μm | 650 … 860 nm | 1700V/W | 0.39 ns | - | TO-46 | TO | 4 | Lens / flat | |
FCI-H250G-GaAs-100 | GaAs | Ø100 μm | 650 … 860 nm | 1650V/W | 0.2 ns | - | TO-46 | TO | 4 | Lens / flat | |
EPD-660-1-0.9 | AlGaAs/GaAs | 0.62mm2 | 620 … 700 nm | 0.42A/W | 40 ns@-1V | 40 pA@-1V | - | SMD | 2 | - | |
EPD-660-3-0.5 | AlGaAs/GaAs | 0.17mm2 | 605 … 705 nm | 0.42A/W | 15 ns@-1V | 40 pA@-1V | Φ3 Plastic THD | Special | 2 | Filter , Lens | |
EPC-660-0.9 | AlGaAs/GaAs | 0.62mm2 | 620 … 700 nm | 0.2A/W | 40 ns@-1V | 40 pA@-1V | - | Chip | - | Filter | |
EPC-660-0.5 | AlGaAs/GaAs | 0.17mm2 | 620 … 700 nm | 0.2A/W | 15 ns@-1V | 40 pA@-1V | - | Chip | - | Filter | |
EPD-660-5-0.9 | AlGaAs/GaAs | 0.62mm2 | 605 … 705 nm | 0.42A/W | 40 ns@-1V | 40 pA@-1V | Φ5 Plastic THD | Special | 2 | Filter , Lens | |
EPC-880-1.4 | AlGaAs/GaAs | 1.79mm2 | 820 … 935 nm | 0.27A/W | 200 ns@-1V | 1 nA@-1V | - | Chip | - | Filter | |
EPC-880-0.9-1 | GaAs | 0.72mm2 | 820 … 935 nm | 0.25A/W | 15 ns@-1V | 1 nA@-1V | - | Chip | - | Filter | |
EPC-880-0.5 | AlGaAs/GaAs | 0.17mm2 | 820 … 935 nm | 0.25A/W | 15 ns@-1V | 1 nA@-1V | - | Chip | - | Filter | |
EPC-740-0.9 | AlGaAs/GaAs | 0.62mm2 | 680 … 770 nm | 0.5A/W | 15 ns@-1V | 40 pA@-5V | - | Chip | - | Filter | |
EPC-740-0.5 | AlGaAs/GaAs | 0.17mm2 | 680 … 770 nm | 0.5A/W | 15 ns@-1V | 40 pA@-5V | - | Chip | - | Filter | |
FCI-H125G-GaAs-100/FC | GaAs | Ø100 μm | 650 … 860 nm | 1700A/W | 0.39 ns | - | TO-46 | Special | 4 | - |